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| UHBS30-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS30-1 is Designed for PACKAGE STYLE .230 6L FLG A .040x45 C B 2XO.130 4X .025 R .115 .430 D E .125 G H I L F FEATURES: * * * OmnigoldTM Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC 9.0 A 50 V 30 V 4.0 V 100 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 1.5 OC/W O O DIM A B C D E F G H I J K L MINIMUM inches / mm JK MAXIMUM inches / mm .355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 / 18.29 .970 / 24.64 .355 / 9.02 .004 / 0.10 .120 / 3.05 .160 / 4.06 .230 / 5.84 .365 / 9.27 .125 / 3.18 .085 / 2.16 .235 / 5.97 .110 / 2.79 .730 / 18.54 .980 / 24.89 .365 / 9.27 .006 / 0.15 .130 / 3.30 .180 / 4.57 .260 / 6.60 ORDER CODE: ASI10670 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO ICES hFE Cob PG C IC = 50 mA IC = 50 mA IE = 10 mA VCE = 15 V VCE = 24 V TC = 25 C O NONETEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 30 50 4.0 5 10 UNITS V V V mA mA --pF dB VCE = 5.0 V VCB = 25 V VCE = 24 V IC = 1.0 A f = 1.0 MHz POUT = 30 W f = 900 GHz 10 --50 7.5 55 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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